Please use this identifier to cite or link to this item:
https://www.um.edu.mt/library/oar/handle/123456789/106542
Title: | Epitaxial silicon wafers substantially free of grown-in defects : U.S. Patent No. 6,284,039 B1 |
Authors: | Mule’ Stagno, Luciano Fei, Lu Holzer, Joseph C. Korb, Harold W. Falster, Robert J. |
Keywords: | Semiconductor wafers Ingots Metals -- Heat treatment |
Issue Date: | 2001 |
Publisher: | United States Patent and Trademark Office |
Citation: | Mule' Stagno, L., Fei, L., Holzer, J. C., Korb, H. W., & Falster, R. J. (2001). Epitaxial silicon wafers substantially free of grown-in defects (U.S. Patent No. 6,284,039). United States. |
Abstract: | The present invention is directed to a set of epitaxial Silicon wafers assembled in a wafer cassette, boat or other wafer carrier. Each wafer comprises a single crystal Silicon Sub-Strate having an axially Symmetric region in which Silicon Self-interstitials are the predominant intrinsic point defect and which is Substantially free of agglomerated defects, and an epitaxial layer which is deposited upon a Surface of the Substrate and which is Substantially free of grown-in defects caused by the presence of agglomerated Silicon Self interstitial defects on the Substrate Surface upon which the epitaxial layer is deposited. |
URI: | https://www.um.edu.mt/library/oar/handle/123456789/106542 |
Appears in Collections: | Scholarly Works - InsSE |
Files in This Item:
File | Description | Size | Format | |
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Epitaxial silicon wafers substantially free of grown-in defects_ US_Patent_No_6284039_2001.pdf | 4.12 MB | Adobe PDF | View/Open |
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