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https://www.um.edu.mt/library/oar/handle/123456789/106546| Title: | Epitaxial wafer substantially free of grown-in defects : U. S. Patent No. 6,565,649 B2 |
| Authors: | Mule’ Stagno, Luciano Fei, Lu Holzer, Joseph C. Korb, Harold W. Falster, Robert J. |
| Keywords: | Semiconductor wafers Silicon Semiconductors |
| Issue Date: | 2003 |
| Publisher: | United States Patent and Trademark Office |
| Citation: | Mule’ Stagno, L., Fei, L., Holzer, J. C., Korb, H. W., & Falster, R. J. (2003). Epitaxial wafer substantially free of grown-in defects. (U.S. Patent No. 6,565,649). United States. |
| Abstract: | The present invention is directed to an epitaxial wafer comprising a single crystal Silicon Substrate having an axially Symmetric region in which Silicon Self-interstitials are the predominant intrinsic point defect and which is substantially free of agglomerated defects, and an epitaxial layer which is deposited upon a Surface of the Substrate and which is Substantially free of grown-in defects caused by the presence of agglomerated Silicon Self-interstitial defects on the Substrate Surface upon which the epitaxial layer is deposited. |
| URI: | https://www.um.edu.mt/library/oar/handle/123456789/106546 |
| Appears in Collections: | Scholarly Works - InsSE |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| Epitaxial_wafer_substantially_free_of_grown_in_defects_US_Patent_No_6565649_2003.pdf | 4.3 MB | Adobe PDF | View/Open |
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