Single crystal silicon wafer having an epitaxial layer substantially free from grown-in defects : U. S. Patent No. 7,097,718 B2

Abstract

Epitaxial wafers comprising a single crystal silicon Substrate comprising agglomerated vacancy defects and having an axially symmetric region in which silicon self-interstitials are the predominant intrinsic point defect and which is substantially free of agglomerated defects, and an epitaxial layer which is deposited upon a surface of the substrate and which is substantially free of grown-in defects caused by the presence of agglomerated intrinsic point defects on the substrate surface upon which the epitaxial layer is deposited.