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DC Field | Value | Language |
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dc.date.accessioned | 2023-02-21T14:00:02Z | - |
dc.date.available | 2023-02-21T14:00:02Z | - |
dc.date.issued | 2006 | - |
dc.identifier.citation | Mule' Stagno, L., Fei, L., Holzer, J. C., Korb, H. W., & Falster, R. J. (2006). Single crystal silicon wafer having an epitaxial layer substantially free from grown-in defects. (US. Patent No. 7,097,718 B2). United States. | en_GB |
dc.identifier.uri | https://www.um.edu.mt/library/oar/handle/123456789/106618 | - |
dc.description.abstract | Epitaxial wafers comprising a single crystal silicon Substrate comprising agglomerated vacancy defects and having an axially symmetric region in which silicon self-interstitials are the predominant intrinsic point defect and which is substantially free of agglomerated defects, and an epitaxial layer which is deposited upon a surface of the substrate and which is substantially free of grown-in defects caused by the presence of agglomerated intrinsic point defects on the substrate surface upon which the epitaxial layer is deposited. | en_GB |
dc.language.iso | en | en_GB |
dc.publisher | United States Patent and Trademark Office | en_GB |
dc.rights | info:eu-repo/semantics/openAccess | en_GB |
dc.subject | Semiconductor wafers | en_GB |
dc.subject | Silicon | en_GB |
dc.subject | Crystals | en_GB |
dc.subject | Epitaxy | en_GB |
dc.title | Single crystal silicon wafer having an epitaxial layer substantially free from grown-in defects : U. S. Patent No. 7,097,718 B2 | en_GB |
dc.type | patent | en_GB |
dc.rights.holder | The copyright of this work belongs to the author(s)/publisher. The rights of this work are as defined by the appropriate Copyright Legislation or as modified by any successive legislation. Users may access this work and can make use of the information contained in accordance with the Copyright Legislation provided that the author must be properly acknowledged. Further distribution or reproduction in any format is prohibited without the prior permission of the copyright holder. | en_GB |
dc.description.reviewed | non peer-reviewed | en_GB |
dc.contributor.creator | Mule’ Stagno, Luciano | - |
dc.contributor.creator | Fei, Lu | - |
dc.contributor.creator | Holzer, Joseph C. | - |
dc.contributor.creator | Korb, Harold W. | - |
dc.contributor.creator | Falster, Robert J. | - |
Appears in Collections: | Scholarly Works - InsSE |
Files in This Item:
File | Description | Size | Format | |
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Single_crystal_silicon_wafer_having_an_epitaxial_layer_substantially_free_from_grown_in_defects_US_Patent_No_7097718B2_2006.pdf | 3.39 MB | Adobe PDF | View/Open |
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