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https://www.um.edu.mt/library/oar/handle/123456789/106620| Title: | Process for making silicon wafers with stabilized oxygen precipitate nucleation centers : U. S. Patent No. 7,201,800 B2 |
| Authors: | Mule’ Stagno, Luciano Libbert, Jeffrey L. Phillips, Richard J. Kulkarni, Milind Banan, Mohsen Brunkhorst, Stephen J. |
| Keywords: | Semiconductor wafers Silicon Nucleation Metals -- Heat treatment |
| Issue Date: | 2007 |
| Publisher: | United States Patent and Trademark Office |
| Citation: | Mule' Stagno, L., Libbert, J. L., Phillips, R. J., Kulkarni, M., Banan, M., & Brunkhorst, S. J. (2007). Process for making silicon wafers with stabilized oxygen precipitate nucleation centers. (U. S. Patent No. 7,201,800 B2). United States. |
| Abstract: | A process for imparting controlled oxygen precipitation behavior to a single crystal silicon wafer. Specifically, prior to formation of the oxygen precipitates, the wafer bulk comprises dopant stabilized oxygen precipitate nucleation centers. The dopant is selected from a group consisting of nitrogen and carbon, and the concentration of the dopant is sufficient to allow the oxygen precipitate nucleation centers, such as an epitaxial deposition process, while maintaining the ability to dissolve any grown-in nucleation centers. |
| URI: | https://www.um.edu.mt/library/oar/handle/123456789/106620 |
| Appears in Collections: | Scholarly Works - InsSE |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| Process_for_making_silicon_wafers_with_stabilized_oxygen_precipitate_nucleation_centers_US_Patent_No_7201800_B2_2007.pdf | 1.72 MB | Adobe PDF | View/Open |
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