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https://www.um.edu.mt/library/oar/handle/123456789/106700| Title: | Czochralski process for growing single crystal silicon by controlling the cooling rate : WO 01/21861 A1 |
| Authors: | McCallum, Kirk D. Brock, Alexander W. Mobsen, Banan Falster, Robert J. Holzer, Joseph C. Johnson, Bayard K. Kim, Chang B. Kimbel, Steven L. Lu, Zheng Mutti, Paolo Voronkov, Vladimir V. Mule’ Stagno, Luciano Libbert, Jeffrey L. |
| Keywords: | Crystals Silicon Ingots Cooling Metals -- Quenching |
| Issue Date: | 2001 |
| Publisher: | Patent Cooperation Treaty (PCT) |
| Citation: | Mccallum, K. D., Brock, A. W., Mobsen, B., Falster, R. J., Holzer, J. C., Johnson, B. K.,...Libbert, J. L. (2001). Czochralski process for growing single crystal silicon by controlling the cooling rate. (WO 01/21861 A1). Patent Cooperation Treaty (PCT). |
| Abstract: | The present invention relates to a process for growing a single crystal silicon ingot, which contains an axially symmetric region having a predominant intrinsic point defect and which is substantially free of agglomerated intrinsic point defects in that region. The process comprising cooling the ingot from the temperature of solidification to a temperature of less than 800 °C and, as part of said cooling step, quench cooling a region of the constant diameter portion of the ingot having a predominant intrinsic point defect through the temperature of nucleation for the agglomerated intrinsic point defects for the intrinsic point defects which predominate in the region. |
| URI: | https://www.um.edu.mt/library/oar/handle/123456789/106700 |
| Appears in Collections: | Scholarly Works - InsSE |
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| File | Description | Size | Format | |
|---|---|---|---|---|
| Czochralski_process_for_growing_single_crystal_silicon_by_controlling_the_cooling_rate_WO_0121861A1_2001.pdf | 3.02 MB | Adobe PDF | View/Open |
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