Please use this identifier to cite or link to this item: https://www.um.edu.mt/library/oar/handle/123456789/106703
Title: Method for producing czochralski silicon free of agglomerated self-interstitial defects : WO 01/21865 A1
Authors: Mule’ Stagno, Luciano
Libbert, Jeffrey L.
Holzer, Joseph C.
Keywords: Semiconductor wafers
Silicon
Metals -- Heat treatment
Ingots
Issue Date: 2001
Publisher: Patent Cooperation Treaty (PCT)
Citation: Mule’ Stagno, L., Libbert, J. L., & Holzer J. C. (2001). Method for producing czochralski silicon free of agglomerated self-interstitial defects. (WO 01/21865 A1). Patent Cooperation Treaty (PCT).
Abstract: A process for heat treating a silicon wafer to dissolve B-type agglomerated interstitial defects present therein. The process includes heating the silicon wafer at a temperature for a time sufficient to dissolve B-deffects, the wafer being heated to said temperature at a rate sufficient to prevent B-defects from becoming stabilized such that these defects are rendered incapable of being dissolved.
URI: https://www.um.edu.mt/library/oar/handle/123456789/106703
Appears in Collections:Scholarly Works - InsSE



Items in OAR@UM are protected by copyright, with all rights reserved, unless otherwise indicated.