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https://www.um.edu.mt/library/oar/handle/123456789/106703| Title: | Method for producing czochralski silicon free of agglomerated self-interstitial defects : WO 01/21865 A1 |
| Authors: | Mule’ Stagno, Luciano Libbert, Jeffrey L. Holzer, Joseph C. |
| Keywords: | Semiconductor wafers Silicon Metals -- Heat treatment Ingots |
| Issue Date: | 2001 |
| Publisher: | Patent Cooperation Treaty (PCT) |
| Citation: | Mule’ Stagno, L., Libbert, J. L., & Holzer J. C. (2001). Method for producing czochralski silicon free of agglomerated self-interstitial defects. (WO 01/21865 A1). Patent Cooperation Treaty (PCT). |
| Abstract: | A process for heat treating a silicon wafer to dissolve B-type agglomerated interstitial defects present therein. The process includes heating the silicon wafer at a temperature for a time sufficient to dissolve B-deffects, the wafer being heated to said temperature at a rate sufficient to prevent B-defects from becoming stabilized such that these defects are rendered incapable of being dissolved. |
| URI: | https://www.um.edu.mt/library/oar/handle/123456789/106703 |
| Appears in Collections: | Scholarly Works - InsSE |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| Method_for_producing_czochralski_silicon_free_of_agglomerated_selfinterstitial_defects_ WO_0121865 A1_2001.pdf | 1.25 MB | Adobe PDF | View/Open |
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