Please use this identifier to cite or link to this item: https://www.um.edu.mt/library/oar/handle/123456789/108573
Title: Confinement subbands in an InGaAs/GaAs non-square quantum well
Authors: Li, E. Herbert
Micallef, Joseph
Weiss, Bernard L.
Keywords: Quantum wells
Thermal interface materials
Bound states (Quantum mechanics)
Issue Date: 1992
Publisher: The Japan Society of Applied Physics
Citation: Li, E. H., Micallef, J. M. J., & Weiss, B. L. W. B. L. (1992). Confinement subbands in an InGaAs/GaAs non-square quantum well. Japanese journal of applied physics, 31(1A/B), L7-L10.
Abstract: Calculations of the confinement subbands energy levels, interband transitions energy and related overlapping wavefunctions in a single In0_2Ga0 ,As/ GaAs non-square strained quantum well structure have been carried out for an error function confinement profile. The results indicate a squeezing of subband states during the latter stages of diffusion, and an enhancement of the off diagonal transitions overlapping wavefunction, during the mid stages of diffusion, which give rise to a relaxed selection rule.
URI: https://www.um.edu.mt/library/oar/handle/123456789/108573
Appears in Collections:Scholarly Works - FacICTMN

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