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Please use this identifier to cite or link to this item: https://www.um.edu.mt/library/oar/handle/123456789/108629
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dc.contributor.authorMicallef, Joseph-
dc.contributor.authorLi, E. Herbert-
dc.contributor.authorWeiss, Bernard L.-
dc.date.accessioned2023-04-19T05:40:02Z-
dc.date.available2023-04-19T05:40:02Z-
dc.date.issued1993-
dc.identifier.citationMicallef, J., Li, E. H., & Weiss, B. L. (1993). The effects of strain on the confinement profile of disordered InGaAs/GaAs single quantum wells. Superlattices and microstructures, 13(1), 125-132.en_GB
dc.identifier.urihttps://www.um.edu.mt/library/oar/handle/123456789/108629-
dc.description.abstractThe effects of strain on the carrier confinement profile of disordered InGaAs/GaAs single quantum wells, assuming an error function compositional profile after interdiffusion, are studied here. Details are given showing how strain and disorder modify the confinement profile, the ground state transition energy and the strain-induced heavy hole-light hole band edge splitting. The shape of the confinement profile of disordered InGaAs/GaAs quantum well structures is shown to be more sensitive to the indium content than to the width of the as-grown quantum well.en_GB
dc.language.isoenen_GB
dc.publisherAcademic Press Limiteden_GB
dc.rightsinfo:eu-repo/semantics/restrictedAccessen_GB
dc.subjectChemicals -- Analysisen_GB
dc.subjectInorganic compounds -- Analysisen_GB
dc.subjectResidual stressesen_GB
dc.subjectGallium compoundsen_GB
dc.subjectGallium arsenideen_GB
dc.subjectIndiumen_GB
dc.subjectQuantum wellsen_GB
dc.subjectElectronic structureen_GB
dc.titleThe effects of strain on the confinement profile of disordered InGaAs/GaAs single quantum wellsen_GB
dc.typearticleen_GB
dc.rights.holderThe copyright of this work belongs to the author(s)/publisher. The rights of this work are as defined by the appropriate Copyright Legislation or as modified by any successive legislation. Users may access this work and can make use of the information contained in accordance with the Copyright Legislation provided that the author must be properly acknowledged. Further distribution or reproduction in any format is prohibited without the prior permission of the copyright holderen_GB
dc.description.reviewedpeer-revieweden_GB
dc.identifier.doi10.1006/spmi.1993.1024-
dc.publication.titleSuperlattices and Microstructuresen_GB
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