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Title: | The effect of interdiffusion on the change of refractive index of an AlGaAs/GaAs quantum well structure |
Authors: | Li, E. Herbert Weiss, Bernard L. Micallef, Joseph |
Keywords: | Refractive index Communications software Bulk solids Annealing of metals Growth factors -- Analysis |
Issue Date: | 1993 |
Publisher: | Chapman & Hall |
Citation: | Li, E. H., Weiss, B. L., & Micallef, J. (1993). The effect of interdiffusion on the change of refractive index of an AlGaAs/GaAs quantum well structure. Optical and quantum electronics, 25, 399-408. |
Abstract: | The change of the refractive index due to quantum well (QW) disordering is calculated for light propagating normal to the Al0.3Ga0.7As/GaAs QW layers (i.e. along the QW growth direction). A hyperbolic function is used to model the above QW confinement profile after disordering, i.e. thermal interdiffusion of trivalent atoms across the well-barrier interfaces. The refractive index difference (Δn) is evaluated for two cases, where case I refers to the difference between a partially disordered QW and a more extensively disordered QW, while case II refers to the difference between an as-grown QW and a partially disordered QW. The results demonstrate that good photon confinement (large Δn > 0) can be achieved for both cases, where Δn increases with increasing QW width and decreases with annealing time for case I while for case II it increases with annealing time. In comparing the two cases, a shorter annealing time is required to achieve the same value of Δn if the case II structures are used. The change of refractive index obtained here demonstrates a larger value of Δn than that produced by the variation of the concentration of free carriers in the bulk material. |
URI: | https://www.um.edu.mt/library/oar/handle/123456789/108632 |
Appears in Collections: | Scholarly Works - FacICTMN |
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