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DC Field | Value | Language |
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dc.contributor.author | Li, E. Herbert | - |
dc.contributor.author | Chan, K. S. | - |
dc.contributor.author | Weiss, Bernard L. | - |
dc.contributor.author | Micallef, Joseph | - |
dc.date.accessioned | 2023-04-19T13:19:45Z | - |
dc.date.available | 2023-04-19T13:19:45Z | - |
dc.date.issued | 1993 | - |
dc.identifier.citation | Li, E. H., Chan, K. S., Weiss, B. L., & Micallef, J. (1993). Quantum‐confined Stark effect in interdiffused AlGaAs/GaAs quantum well. Applied physics letters, 63(4), 533-535. | en_GB |
dc.identifier.uri | https://www.um.edu.mt/library/oar/handle/123456789/108676 | - |
dc.description.abstract | The quantum‐confined Stark effect is analyzed in an interdiffused Al0.3Ga0.7As/GaAs single quantum well (QW) with an as‐grown well width of 100 Å, where the confinement profile is modeled by an error function. Results indicate a twofold enhancement of the Stark shift for the interdiffused quantum well over that of the square quantum well for a 50 kV/cm applied field. The fundamental exciton absorption peak also shows a much larger reduction with increasing applied field in the more extensively interdiffused QW. These characteristics may be used to realize optical modulators with higher on/off ratios and lower drive voltages. | en_GB |
dc.language.iso | en | en_GB |
dc.publisher | AIP Publishing | en_GB |
dc.rights | info:eu-repo/semantics/restrictedAccess | en_GB |
dc.subject | Gallium arsenide | en_GB |
dc.subject | Inorganic compounds -- Analysis | en_GB |
dc.subject | Stark effect | en_GB |
dc.subject | Exciton theory | en_GB |
dc.subject | Quantum wells | en_GB |
dc.subject | Semiconductors -- Materials | en_GB |
dc.title | Quantum-confined Stark effect in interdiffused AlGaAs/GaAs quantum well | en_GB |
dc.type | article | en_GB |
dc.rights.holder | The copyright of this work belongs to the author(s)/publisher. The rights of this work are as defined by the appropriate Copyright Legislation or as modified by any successive legislation. Users may access this work and can make use of the information contained in accordance with the Copyright Legislation provided that the author must be properly acknowledged. Further distribution or reproduction in any format is prohibited without the prior permission of the copyright holder | en_GB |
dc.description.reviewed | peer-reviewed | en_GB |
dc.identifier.doi | 10.1063/1.109996 | - |
dc.publication.title | Applied Physics Letters | en_GB |
Appears in Collections: | Scholarly Works - FacICTMN |
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