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Title: | The optical properties of InGaAs(P)/InP Under Group V sublattice two-phase interdiffusion |
Authors: | Li, E. Herbert Micallef, Joseph Shui, W.C. |
Keywords: | Gallium arsenide Quantum wells Strains and stresses -- Analysis Composite materials -- Analysis |
Issue Date: | 1995 |
Publisher: | Material Research Society Symposium Proceedings |
Citation: | Li, E. H., Micallef, J., & Shui, W. C. (1995). The optical properties of InGaAs (P)/InP under group V sublattice two-phase interdiffusion. MRS Online Proceedings Library (OPL), 417, 289–294. |
Abstract: | Using the fundamental transition state, we will investigate the two phase interdiffusion of group V sublattice in a strained lattice matched InGaAs/InP quantum well (QW) structures. The model employs three parameters namely the diffusion coefficients in the barrier (Db)and in the well (Dw)and the concentration ratio (k) of the diffused species at the heterstructure. The QW model includes the effects of strain and the exciton. A pseudo time dependent calculation is also considered and results are fitted to the reported experimental data. These parameters which characterize the diffusion mechanism can be measure to form a better understanding of the interdiffsion process for group V sublattice. |
URI: | https://www.um.edu.mt/library/oar/handle/123456789/108762 |
Appears in Collections: | Scholarly Works - FacICTMN |
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