Please use this identifier to cite or link to this item:
https://www.um.edu.mt/library/oar/handle/123456789/108844| Title: | Two ±0.7 V S2I class AB fully differential memory cells |
| Authors: | Grech, Ivan Micallef, Joseph Vladimirova, T. |
| Keywords: | Analog-to-digital converters Feedback control systems -- Design and construction Analog CMOS integrated circuits Radio frequency integrated circuits -- Simulation methods |
| Issue Date: | 2000 |
| Publisher: | The Institution of Electrical Engineers |
| Citation: | Grech, I., Micallef, J., & Vladimirova, T. (2000). Two±0.7 V S2I class AB differential memory cells. Electronics letters, 36(25), 2062-2063. |
| Abstract: | Two novel class AB sampled switched current memory cells are presented, together with simulation results obtained at a supply voltage of ±0.7V. These cells exhibit a quiescent current that can be accurately controlled and is independent of the supply voltage. Furthermore, it is ensured that the minimum current passing through the memory transistors is equal to a well defined value, throughout the signal range. The first memory cell is based on a fully-differential architecture, while the second one can be used in single-ended or pseudo-differential circuits. |
| URI: | https://www.um.edu.mt/library/oar/handle/123456789/108844 |
| Appears in Collections: | Scholarly Works - FacICTMN |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| Two_±0.7_V_S2I_class_AB_fully_differential_memory_cells.pdf Restricted Access | 162.17 kB | Adobe PDF | View/Open Request a copy |
Items in OAR@UM are protected by copyright, with all rights reserved, unless otherwise indicated.