Intrinsic point defects and reactions in the growth of large silicon crystals

Abstract

The control of the behavior of intrinsic point defects in CZ silicon is one of the most important cballenges of silicon crystal teclmology today. This paper discusses the incorporation of excess VIIC8Dcies or intentitials into silicon near the growth temperature, the reactions which nucleate the agglomerated defects important to device yield, the growth of these defects and the effects of uncomumed residual point defects on the subsequent oxygen clustering at later stages of the cooling of the crystal. It is through this link of residual point defect concentrations that the two main defect related issues in CZ silicon - intrinsic point defect agglomerates and oxygen precipitation - are linked.