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Please use this identifier to cite or link to this item: https://www.um.edu.mt/library/oar/handle/123456789/113284
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dc.contributor.authorCadis, Adrian-Ionut-
dc.contributor.authorPopovici, E.-J.-
dc.contributor.authorBica, E.-
dc.contributor.authorPerhaita, I.-
dc.contributor.authorBarbu-Tudoran, L.-
dc.contributor.authorIndrea, E.-
dc.date.accessioned2023-09-25T10:33:51Z-
dc.date.available2023-09-25T10:33:51Z-
dc.date.issued2010-
dc.identifier.citationCadis, A. I., Popovici, E. J., Bica, E., Perhaita, I., Barbu-Tudoran, L., & Indrea, E. (2010, October). Studies on the synthesis of manganese doped zinc sulfide nanocrystalline powders using methacrylic acid as additive. In CAS 2010 Proceedings (International Semiconductor Conference), 2, Romania. 513-516.en_GB
dc.identifier.urihttps://www.um.edu.mt/library/oar/handle/123456789/113284-
dc.description.abstractManganese-doped zinc sulfide nanocrystalline powders have been synthesized from zinc-manganese acetate and sodium sulfide, in methanol containing methacrylic acid as additive. Precipitation was performed at low temperature, using the reagent simultaneous addition technique. All samples were characterized by photoluminescence spectroscopy electron microscopy and X-ray diffraction. A correlation between the preparation conditions and optical and morphological characteristics of ZnS:Mn2* powders was established.en_GB
dc.language.isoenen_GB
dc.publisherIEEEen_GB
dc.rightsinfo:eu-repo/semantics/restrictedAccessen_GB
dc.subjectZinc sulfideen_GB
dc.subjectNanocrystalsen_GB
dc.subjectPhotoluminescenceen_GB
dc.titleStudies on the synthesis of manganese doped zinc sulfide nanocrystalline powders using methacrylic acid as additiveen_GB
dc.typeconferenceObjecten_GB
dc.rights.holderThe copyright of this work belongs to the author(s)/publisher. The rights of this work are as defined by the appropriate Copyright Legislation or as modified by any successive legislation. Users may access this work and can make use of the information contained in accordance with the Copyright Legislation provided that the author must be properly acknowledged. Further distribution or reproduction in any format is prohibited without the prior permission of the copyright holder.en_GB
dc.bibliographicCitation.conferencenameCAS 2010 Proceedings (International Semiconductor Conference)en_GB
dc.bibliographicCitation.conferenceplaceSinaia, Romania, 11-13/10/2010en_GB
dc.description.reviewedpeer-revieweden_GB
dc.identifier.doi10.1109/SMICND.2010.5650477-
Appears in Collections:Scholarly Works - FacEngMME

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