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Please use this identifier to cite or link to this item: https://www.um.edu.mt/library/oar/handle/123456789/113382
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dc.contributor.authorCadis, Adrian-Ionut-
dc.contributor.authorMuresan, L. E.-
dc.contributor.authorPerhaita, I.-
dc.contributor.authorBarbu-Tudoran, L.-
dc.contributor.authorBorodi, G.-
dc.date.accessioned2023-10-02T11:44:58Z-
dc.date.available2023-10-02T11:44:58Z-
dc.date.issued2020-
dc.identifier.citationCadis, A., Muresan, L. E., Perhaita, I., Barbu-Tudoran, L., & Borodi, G. (2020). Copper indium sulphide nanoparticles with tunable energy band gap obtained by ultrasound-assisted precipitation. Journal of Optoelectronics and Advanced Materials, 22(11-12), 613-618.en_GB
dc.identifier.urihttps://www.um.edu.mt/library/oar/handle/123456789/113382-
dc.description.abstractCopper indium sulphide (CIS) nanoparticles were prepared using ultrasound-assisted precipitation, by simultaneous addition of reagents. The Cu-In ratios was varied in order to study its effect on morpho-structural characteristics of CIS. Depending on the composition, the surface area of CIS powders varies between 35.3-114.3 m2 /g and the energy band gap between 1.4-2.9 eV. The morphology, structure and optical properties of the samples were highlighted by UV-Vis spectroscopy, XRD, TEM and BET analysis. The experimental amount of Cu-In ratio was determined based on ICP-OES results and the energy band gap is calculated from UV-Vis spectra using Tauc’s relation.en_GB
dc.language.isoenen_GB
dc.publisherInstitutul National de Cercetare-Dezvoltare pentru Optoelectronica, National Institute of Research and Development for Optoelectronicsen_GB
dc.rightsinfo:eu-repo/semantics/restrictedAccessen_GB
dc.subjectPrecipitation (Chemistry)en_GB
dc.subjectNanoparticlesen_GB
dc.subjectSpectrum analysisen_GB
dc.titleCopper indium sulphide nanoparticles with tunable energy band gap obtained by ultrasound-assisted precipitationen_GB
dc.typearticleen_GB
dc.rights.holderThe copyright of this work belongs to the author(s)/publisher. The rights of this work are as defined by the appropriate Copyright Legislation or as modified by any successive legislation. Users may access this work and can make use of the information contained in accordance with the Copyright Legislation provided that the author must be properly acknowledged. Further distribution or reproduction in any format is prohibited without the prior permission of the copyright holder.en_GB
dc.description.reviewedpeer-revieweden_GB
dc.publication.titleJournal of Optoelectronics and Advanced Materialsen_GB
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