Please use this identifier to cite or link to this item: https://www.um.edu.mt/library/oar/handle/123456789/130250
Title: IGBT’s ageing and its impacts on the EM conducted emissions
Authors: Dimech, Evan
Dawson, John F.
Keywords: Insulated gate bipolar transistors
Power electronics -- Equipment and supplies
Electronic apparatus and appliances -- Reliability
Electromagnetic interference
Electromagnetic compatibility
Issue Date: 2024-09
Publisher: Institute of Electrical and Electronics Engineers
Citation: Dimech, E., & Dawson, J. F. (2024, September). IGBT’s Ageing and its Impacts on the EM Conducted Emissions. International Symposium on Electromagnetic Compatibility–EMC Europe. IEEE, Brugge, 1082-1087.
Abstract: IGBTs play crucial roles in various power electronic applications, demanding reliability over extended periods. Understanding their failure mechanisms is vital for manufacturers and engineers. This study addresses gaps by correlating IGBT degradation, particularly die-attach and gate oxide contamination, with conducted electromagnetic (EM) disturbances. Accelerated ageing was conducted on 600V, 16A IGBTs using a power cycling system, revealing significant changes in static and dynamic parameters. Switching transients showed a slowdown in turn-off, attributed to the experienced degradation. Experimental setups demonstrated a direct link between degradation, switching transients, especially collector current (IC) turn-off, and reduced conducted EM disturbances.
URI: https://www.um.edu.mt/library/oar/handle/123456789/130250
Appears in Collections:Scholarly Works - FacEngESE

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