Browsing by Author Holzer, Joseph C.
Showing results 1 to 8 of 8
| Issue Date | Title | Author(s) |
| 2001 | Czochralski process for growing single crystal silicon by controlling the cooling rate : WO 01/21861 A1 | McCallum, Kirk D.; Brock, Alexander W.; Mobsen, Banan; Falster, Robert J.; Holzer, Joseph C.; Johnson, Bayard K.; Kim, Chang B.; Kimbel, Steven L.; Lu, Zheng; Mutti, Paolo; Voronkov, Vladimir V.; Mule’ Stagno, Luciano; Libbert, Jeffrey L. |
| 2001 | Epitaxial silicon wafers substantially free of grown-in defects : U.S. Patent No. 6,284,039 B1 | Mule’ Stagno, Luciano; Fei, Lu; Holzer, Joseph C.; Korb, Harold W.; Falster, Robert J. |
| 2003 | Epitaxial wafer substantially free of grown-in defects : U. S. Patent No. 6,565,649 B2 | Mule’ Stagno, Luciano; Fei, Lu; Holzer, Joseph C.; Korb, Harold W.; Falster, Robert J. |
| 2003 | Method for producing czochralski silicon free of agglomerated self-interstitial defects : U. S. Patent No. 6,635,587 B1 | Mule’ Stagno, Luciano; Libbert, Jeffrey L.; Holzer, Joseph C. |
| 2001 | Method for producing czochralski silicon free of agglomerated self-interstitial defects : WO 01/21865 A1 | Mule’ Stagno, Luciano; Libbert, Jeffrey L.; Holzer, Joseph C. |
| 2003 | Process for suppressing the nucleation and/or growth of interstitial type defects by controlling the cooling rate through nucleation | McCallum, Kirk D.; Brock, Alexander W.; Banan, Mohsen; Falster, Robert J.; Holzer, Joseph C.; Johnson, Bayard K.; Bum Kim, Chang; Kimbel, Steven L.; Lu, Zheng; Metti, Paolo; Voronkov, Vladimir V.; Mule’ Stagno, Luciano; Libbert, Jeffrey L. |
| 2003 | Process for suppressing the nucleation and/or growth of interstitial type defects by controlling the cooling rate through nucleation : U. S. Patent Application Publication No. 2003/0196587 A1 | McCallum, Kirk D.; Alexander, W. Brock; Banan, Mohsen; Falster, Robert J.; Holzer, Joseph C.; Johnson, Bayard K.; Bum Kim, Chang; Kimbel, Steven L.; Lu, Zheng; Mutti, Paolo; Voronkov, Vladimir V.; Mule’ Stagno, Luciano; Libbert, Jeffrey L. |
| 2006 | Single crystal silicon wafer having an epitaxial layer substantially free from grown-in defects : U. S. Patent No. 7,097,718 B2 | Mule’ Stagno, Luciano; Fei, Lu; Holzer, Joseph C.; Korb, Harold W.; Falster, Robert J. |
