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Browsing by Subject Semiconductor wafers

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Showing results 1 to 10 of 10
Issue DateTitleAuthor(s)
2004Czochralski process for growing single crystal silicon by controlling the cooling rate : WO 2001/021861McCallum, K. D.; Alexander, W. B.; Banan, M.; Falster, R. J.; Holzer, J. C.; Johnson, B. K.; Kim, C. B.; Kimbel, S. L.; Lu, Z.; Mutti, P.; Voronkov, V. V.; Mule’ Stagno, Luciano; Libbert, J. L.
2001Epitaxial silicon wafers substantially free of grown-in defects : U.S. Patent No. 6,284,039 B1Mule’ Stagno, Luciano; Fei, Lu; Holzer, Joseph C.; Korb, Harold W.; Falster, Robert J.
2003Epitaxial wafer substantially free of grown-in defects : U. S. Patent No. 6,565,649 B2Mule’ Stagno, Luciano; Fei, Lu; Holzer, Joseph C.; Korb, Harold W.; Falster, Robert J.
2003Ideal oxygen precipitating silicon wafers with nitrogen/carbon stabilized oxygen precipitate nucleation centers and process for making the same : U. S. Patent Application Publication No. 2003/0136961 A1Mule’ Stagno, Luciano; Libbert, Jeffrey L.; Phillips, Richard J.; Kulkarni, Milind; Banan, Mohsen; Brunkhorst, Stephen J.
1998An investigation of the limit of detection and the scattering dependence of the optical precipitate profiler (OPP)Mule’ Stagno, Luciano; Hill, D. E.; Standley, R.; Olmo, M.; Holzer, J. C.; Falster, R.; Fraundorf, P.
2003Method for producing czochralski silicon free of agglomerated self-interstitial defects : U. S. Patent No. 6,635,587 B1Mule’ Stagno, Luciano; Libbert, Jeffrey L.; Holzer, Joseph C.
2001Method for producing czochralski silicon free of agglomerated self-interstitial defects : WO 01/21865 A1Mule’ Stagno, Luciano; Libbert, Jeffrey L.; Holzer, Joseph C.
2007Process for making silicon wafers with stabilized oxygen precipitate nucleation centers : U. S. Patent No. 7,201,800 B2Mule’ Stagno, Luciano; Libbert, Jeffrey L.; Phillips, Richard J.; Kulkarni, Milind; Banan, Mohsen; Brunkhorst, Stephen J.
2004Silicon wafers with stabilized oxygen precipitate nucleation centers and process for making the same : U. S. Patent No. 6,808,781 B2Mule’ Stagno, Luciano; Libbert, Jeffrey L.; Phillips, Richard J.; Kulkarni, Milind; Banan, Mohsen; Brunkhorst, Stephen J.
2006Single crystal silicon wafer having an epitaxial layer substantially free from grown-in defects : U. S. Patent No. 7,097,718 B2Mule’ Stagno, Luciano; Fei, Lu; Holzer, Joseph C.; Korb, Harold W.; Falster, Robert J.
Showing results 1 to 10 of 10